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제조사 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합

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결과
사진 제조사 부품번호 재고 여부 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합
GE04MPS06E-TR

GE04MPS06E-TR

650V 4A TO-252-2 SIC SCHOTTKY MP

GeneSiC Semiconductor

7,102
RFQ
GE04MPS06E-TR데이터시트 MPS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.35 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 650 V 186pF @ 1V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
GE10MPS06E-TR

GE10MPS06E-TR

650V 10A TO-252-2 SIC SCHOTTKY M

GeneSiC Semiconductor

5,854
RFQ
GE10MPS06E-TR데이터시트 MPS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 26A 1.35 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 650 V 466pF @ 1V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
GD30MPS06J-TR

GD30MPS06J-TR

650V 30A TO-263-7 SIC SCHOTTKY M

GeneSiC Semiconductor

7,595
RFQ
GD30MPS06J-TR데이터시트 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 51A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 650 V 735pF @ 1V, 1MHz - - Surface Mount TO-263-7 -55°C ~ 175°C
GC02MPS12-220

GC02MPS12-220

DIODE SIL CARB 1.2KV 12A TO220-2

GeneSiC Semiconductor

3,154
RFQ
GC02MPS12-220데이터시트 SiC Schottky MPS™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 12A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 2 µA @ 1200 V 127pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GB01SLT12-252

GB01SLT12-252

DIODE SIL CARBIDE 1.2KV 1A TO252

GeneSiC Semiconductor

6,169
RFQ
GB01SLT12-252데이터시트 SiC Schottky MPS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 1A 1.8 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 2 µA @ 1200 V 69pF @ 1V, 1MHz - - Surface Mount TO-252 -55°C ~ 175°C
GB01SLT12-220

GB01SLT12-220

DIODE SIL CARB 1.2KV 1A TO220-2

GeneSiC Semiconductor

5,308
RFQ
GB01SLT12-220데이터시트 - TO-220-2 Bulk Obsolete SiC (Silicon Carbide) Schottky 1200 V 1A 1.8 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 2 µA @ 1200 V 69pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GB02SLT12-252

GB02SLT12-252

DIODE SIL CARBIDE 1.2KV 5A TO252

GeneSiC Semiconductor

6,442
RFQ
GB02SLT12-252데이터시트 SiC Schottky MPS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 131pF @ 1V, 1MHz - - Surface Mount TO-252 -55°C ~ 175°C
GB02SLT12-220

GB02SLT12-220

DIODE SIL CARB 1.2KV 2A TO220-2

GeneSiC Semiconductor

7,000
RFQ
GB02SLT12-220데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 2A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 138pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GKR26/04

GKR26/04

DIODE GEN PURP 400V 25A DO4

GeneSiC Semiconductor

8,503
RFQ
GKR26/04데이터시트 - DO-203AA, DO-4, Stud Bulk Obsolete Standard 400 V 25A 1.55 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 4 mA @ 400 V - - - Chassis, Stud Mount DO-4 -40°C ~ 180°C
GE08MPS06A

GE08MPS06A

DIODE SIL CARB 650V 15A TO220-2

GeneSiC Semiconductor

3
RFQ
GE08MPS06A데이터시트 SiC Schottky MPS™ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 15A - No Recovery Time > 500mA (Io) - - 373pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
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