단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GB01SLT06-214DIODE SIL CARB 650V 1A DO214AA GeneSiC Semiconductor |
6,966 |
|
|
SiC Schottky MPS™ | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1A | 2 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 6.5 V | 76pF @ 1V, 1MHz | - | - | Surface Mount | DO-214AA | -55°C ~ 175°C |
|
GB01SLT12-214DIODE SIL CARBIDE 1.2KV 2.5A SMB GeneSiC Semiconductor |
575 |
|
|
SiC Schottky MPS™ | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 2.5A | 1.8 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 69pF @ 1V, 1MHz | - | - | Surface Mount | DO-214AA (SMB) | -55°C ~ 175°C |
|
GB02SLT12-214DIODE SIL CARB 1.2KV 2A DO214AA GeneSiC Semiconductor |
12,092 |
|
|
SiC Schottky MPS™ | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 2A | 1.8 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 131pF @ 1V, 1MHz | - | - | Surface Mount | DO-214AA | -55°C ~ 175°C |
|
GD10MPS12EDIODE SIL CARB 1.2KV 29A TO252-2 GeneSiC Semiconductor |
9,841 |
|
|
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 29A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 367pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
GD10MPS12ADIODE SIL CARB 1.2KV 25A TO220-2 GeneSiC Semiconductor |
3,529 |
|
|
SiC Schottky MPS™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 25A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 367pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GD05MPS17J-TR1700V 5A TO-247-2 SIC SCHOTTKY M GeneSiC Semiconductor |
1,286 |
|
|
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1700 V | 15A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 361pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
|
GD05MPS17HDIODE SIL CARB 1.7KV 15A TO247-2 GeneSiC Semiconductor |
993 |
|
|
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 15A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 361pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GD10MPS17HDIODE SIL CARB 1.7KV 26A TO247-2 GeneSiC Semiconductor |
780 |
|
|
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 26A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 721pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GD60MPS06HDIODE SIL CARB 650V 82A TO247-2 GeneSiC Semiconductor |
849 |
|
|
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 82A | 1.8 V @ 60 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 1463pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GAP3SLT33-214DIODE SIC 3.3KV 300MA DO214AA GeneSiC Semiconductor |
6,598 |
|
|
SiC Schottky MPS™ | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 3300 V | 300mA | 2.2 V @ 300 mA | - | 0 ns | 10 µA @ 3300 V | 42pF @ 1V, 1MHz | - | - | Surface Mount | DO-214AA | -55°C ~ 175°C |
