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제조사 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합

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결과
사진 제조사 부품번호 재고 여부 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합
GB01SLT06-214

GB01SLT06-214

DIODE SIL CARB 650V 1A DO214AA

GeneSiC Semiconductor

6,966
RFQ
GB01SLT06-214데이터시트 SiC Schottky MPS™ DO-214AA, SMB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1A 2 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 6.5 V 76pF @ 1V, 1MHz - - Surface Mount DO-214AA -55°C ~ 175°C
GB01SLT12-214

GB01SLT12-214

DIODE SIL CARBIDE 1.2KV 2.5A SMB

GeneSiC Semiconductor

575
RFQ
GB01SLT12-214데이터시트 SiC Schottky MPS™ DO-214AA, SMB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 2.5A 1.8 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 69pF @ 1V, 1MHz - - Surface Mount DO-214AA (SMB) -55°C ~ 175°C
GB02SLT12-214

GB02SLT12-214

DIODE SIL CARB 1.2KV 2A DO214AA

GeneSiC Semiconductor

12,092
RFQ
GB02SLT12-214데이터시트 SiC Schottky MPS™ DO-214AA, SMB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 2A 1.8 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 131pF @ 1V, 1MHz - - Surface Mount DO-214AA -55°C ~ 175°C
GD10MPS12E

GD10MPS12E

DIODE SIL CARB 1.2KV 29A TO252-2

GeneSiC Semiconductor

9,841
RFQ
GD10MPS12E데이터시트 SiC Schottky MPS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 29A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 1200 V 367pF @ 1V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
GD10MPS12A

GD10MPS12A

DIODE SIL CARB 1.2KV 25A TO220-2

GeneSiC Semiconductor

3,529
RFQ
GD10MPS12A데이터시트 SiC Schottky MPS™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 25A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 1200 V 367pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GD05MPS17J-TR

GD05MPS17J-TR

1700V 5A TO-247-2 SIC SCHOTTKY M

GeneSiC Semiconductor

1,286
RFQ
GD05MPS17J-TR데이터시트 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1700 V 15A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 361pF @ 1V, 1MHz - - Surface Mount TO-263-7 -55°C ~ 175°C
GD05MPS17H

GD05MPS17H

DIODE SIL CARB 1.7KV 15A TO247-2

GeneSiC Semiconductor

993
RFQ
GD05MPS17H데이터시트 SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 15A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 361pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GD10MPS17H

GD10MPS17H

DIODE SIL CARB 1.7KV 26A TO247-2

GeneSiC Semiconductor

780
RFQ
GD10MPS17H데이터시트 SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 26A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 721pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GD60MPS06H

GD60MPS06H

DIODE SIL CARB 650V 82A TO247-2

GeneSiC Semiconductor

849
RFQ
GD60MPS06H데이터시트 SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 82A 1.8 V @ 60 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 650 V 1463pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GAP3SLT33-214

GAP3SLT33-214

DIODE SIC 3.3KV 300MA DO214AA

GeneSiC Semiconductor

6,598
RFQ
GAP3SLT33-214데이터시트 SiC Schottky MPS™ DO-214AA, SMB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 3300 V 300mA 2.2 V @ 300 mA - 0 ns 10 µA @ 3300 V 42pF @ 1V, 1MHz - - Surface Mount DO-214AA -55°C ~ 175°C
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