단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GD30MPS12J-TRDIODE SIL CARB 1.2KV 59A TO263-7 GeneSiC Semiconductor |
2,036 |
|
|
SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 59A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 1101pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
|
GD15MPS17HDIODE SIL CARB 1.7KV 36A TO247-2 GeneSiC Semiconductor |
1,214 |
|
|
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 36A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 1082pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GD50MPS12HDIODE SIL CARB 1.2KV 92A TO247-2 GeneSiC Semiconductor |
124 |
|
|
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 92A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 1200 V | 1835pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GD10MPS12HDIODE SIL CARB 1.2KV 10A TO247-2 GeneSiC Semiconductor |
540 |
|
|
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247-2 | 175°C |
|
GD30MPS06HDIODE SIL CARB 650V 49A TO247-2 GeneSiC Semiconductor |
614 |
|
|
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 49A | - | No Recovery Time > 500mA (Io) | - | - | 735pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GD20MPS12ADIODE SIL CARB 1.2KV 42A TO220-2 GeneSiC Semiconductor |
2,307 |
|
|
SiC Schottky MPS™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 42A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 737pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
1N3891DIODE GEN PURP 200V 12A DO4 GeneSiC Semiconductor |
887 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 12A | 1.4 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
|
1N1184DIODE GEN PURP 100V 35A DO5 GeneSiC Semiconductor |
191 |
|
|
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 100 V | 35A | 1.2 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 190°C |
|
1N1184ADIODE GEN PURP 100V 40A DO5 GeneSiC Semiconductor |
260 |
|
|
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 100 V | 40A | 1.1 V @ 40 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 200°C |
|
|
1N2130ARDIODE GEN PURP REV 150V 60A DO5 GeneSiC Semiconductor |
245 |
|
|
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 150 V | 60A | 1.1 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 200°C |
