단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GB02SLT06-214SIC SCHOTTKY DIODE 650V 2A GeneSiC Semiconductor |
3,680 |
|
|
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
GC08MPS12-220DIODE SIL CARB 1.2KV 43A TO220-2 GeneSiC Semiconductor |
4,827 |
|
|
SiC Schottky MPS™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 43A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 7 µA @ 1200 V | 545pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GB05SLT12-252DIODE SIL CARBIDE 1.2KV 5A TO252 GeneSiC Semiconductor |
7,573 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 | -55°C ~ 175°C |
|
GC05MPS12-252DIODE SIL CARB 1.2KV 27A TO252-2 GeneSiC Semiconductor |
6,730 |
|
|
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 27A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 4 µA @ 1200 V | 359pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
S6BDIODE GEN PURP 100V 6A DO4 GeneSiC Semiconductor |
3,975 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 100 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6BRDIODE GEN PURP REV 100V 6A DO4 GeneSiC Semiconductor |
5,296 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 100 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6DDIODE GEN PURP 200V 6A DO4 GeneSiC Semiconductor |
4,555 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6DRDIODE GEN PURP REV 200V 6A DO4 GeneSiC Semiconductor |
4,886 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 200 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6GDIODE GEN PURP 400V 6A DO4 GeneSiC Semiconductor |
8,768 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 400 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6GRDIODE GEN PURP REV 400V 6A DO4 GeneSiC Semiconductor |
3,180 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 400 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
