단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S6JDIODE GEN PURP 600V 6A DO4 GeneSiC Semiconductor |
3,598 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 600 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6JRDIODE GEN PURP REV 600V 6A DO4 GeneSiC Semiconductor |
6,449 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6KDIODE GEN PURP 800V 6A DO4 GeneSiC Semiconductor |
3,452 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 800 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6KRDIODE GEN PURP REV 800V 6A DO4 GeneSiC Semiconductor |
3,912 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 800 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6MDIODE GEN PURP 1KV 6A DO4 GeneSiC Semiconductor |
7,205 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 1000 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6MRDIODE GEN PURP REV 1KV 6A DO4 GeneSiC Semiconductor |
6,290 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 1000 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6QDIODE GEN PURP 1.2KV 6A DO4 GeneSiC Semiconductor |
7,837 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 1200 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
S6QRDIODE GEN PURP REV 1.2KV 6A DO4 GeneSiC Semiconductor |
2,316 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 1200 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
|
GC05MPS12-220DIODE SIL CARB 1.2KV 29A TO220-2 GeneSiC Semiconductor |
3,581 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 29A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 4 µA @ 1200 V | 359pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GC10MPS12-220DIODE SIL CARB 1.2KV 54A TO220-2 GeneSiC Semiconductor |
3,074 |
|
|
SiC Schottky MPS™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 54A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 660pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
