단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYC60W-600PQDIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors |
2,426 |
|
|
- | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 2.6 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
WNSC2D10650DJDIODE SIL CARBIDE 650V 10A DPAK WeEn Semiconductors |
7,097 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C |
|
WNSC6D10650QDIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors |
935 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
WNSC2D10650BJDIODE SIL CARBIDE 650V 10A D2PAK WeEn Semiconductors |
8,768 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C |
|
WNSC2D12650TJDIODE SIL CARBIDE 650V 12A 5DFN WeEn Semiconductors |
2,985 |
|
|
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
|
WNSC12650T6JDIODE SIL CARBIDE 650V 12A 5DFN WeEn Semiconductors |
2,998 |
|
|
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.8 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 328pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
|
NXPSC066506QDIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors |
3,000 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
NXPSC06650B6JDIODE SIL CARBIDE 650V 6A D2PAK WeEn Semiconductors |
3,188 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
NXPSC06650X6QDIODE SIL CARBIDE 650V 6A TO220F WeEn Semiconductors |
197 |
|
|
- | TO-220-2 Full Pack, Isolated Tab | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C (Max) |
|
WND45P16WQDIODE GEN PURP 1.6KV 45A TO247-2 WeEn Semiconductors |
1,008 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1600 V | 45A | 1.4 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | - | - | Through Hole | TO-247-2 | 150°C |
