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제조사 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합

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결과
사진 제조사 부품번호 재고 여부 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합
BYC60W-600PQ

BYC60W-600PQ

DIODE GEN PURP 600V 60A TO247-2

WeEn Semiconductors

2,426
RFQ
BYC60W-600PQ데이터시트 - TO-247-2 Tube Active Standard 600 V 60A 2.6 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C (Max)
WNSC2D10650DJ

WNSC2D10650DJ

DIODE SIL CARBIDE 650V 10A DPAK

WeEn Semiconductors

7,097
RFQ
WNSC2D10650DJ데이터시트 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 310pF @ 1V, 1MHz - - Surface Mount DPAK 175°C
WNSC6D10650Q

WNSC6D10650Q

DIODE SIL CARB 650V 10A TO220AC

WeEn Semiconductors

935
RFQ
WNSC6D10650Q데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 500pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
WNSC2D10650BJ

WNSC2D10650BJ

DIODE SIL CARBIDE 650V 10A D2PAK

WeEn Semiconductors

8,768
RFQ
WNSC2D10650BJ데이터시트 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 310pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C
WNSC2D12650TJ

WNSC2D12650TJ

DIODE SIL CARBIDE 650V 12A 5DFN

WeEn Semiconductors

2,985
RFQ
WNSC2D12650TJ데이터시트 - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 380pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C
WNSC12650T6J

WNSC12650T6J

DIODE SIL CARBIDE 650V 12A 5DFN

WeEn Semiconductors

2,998
RFQ
WNSC12650T6J데이터시트 - 4-VSFN Exposed Pad Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.8 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 328pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C
NXPSC066506Q

NXPSC066506Q

DIODE SIL CARB 650V 6A TO220AC

WeEn Semiconductors

3,000
RFQ
NXPSC066506Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 190pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC06650B6J

NXPSC06650B6J

DIODE SIL CARBIDE 650V 6A D2PAK

WeEn Semiconductors

3,188
RFQ
NXPSC06650B6J데이터시트 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 190pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
NXPSC06650X6Q

NXPSC06650X6Q

DIODE SIL CARBIDE 650V 6A TO220F

WeEn Semiconductors

197
RFQ
NXPSC06650X6Q데이터시트 - TO-220-2 Full Pack, Isolated Tab Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 190pF @ 1V, 1MHz - - Through Hole TO-220F 175°C (Max)
WND45P16WQ

WND45P16WQ

DIODE GEN PURP 1.6KV 45A TO247-2

WeEn Semiconductors

1,008
RFQ
WND45P16WQ데이터시트 - TO-247-2 Tube Active Standard 1600 V 45A 1.4 V @ 45 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V - - - Through Hole TO-247-2 150°C
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