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제조사 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합

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사진 제조사 부품번호 재고 여부 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합
WNSC6D01650MBJ

WNSC6D01650MBJ

DIODE SIL CARBIDE 650V 1A SMB

WeEn Semiconductors

1,944
RFQ
WNSC6D01650MBJ데이터시트 - DO-214AA, SMB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1A 1.4 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 130pF @ 1V, 1MHz - - Surface Mount SMB 175°C
WNSC2D06650DJ

WNSC2D06650DJ

DIODE SIL CARBIDE 650V 6A DPAK

WeEn Semiconductors

11,997
RFQ
WNSC2D06650DJ데이터시트 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 198pF @ 1V, 1MHz - - Surface Mount DPAK 175°C
WNSC2D08650Q

WNSC2D08650Q

DIODE SIL CARB 650V 8A TO220AC

WeEn Semiconductors

4,990
RFQ
WNSC2D08650Q데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 260pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C
BYC30WT-600PQ

BYC30WT-600PQ

DIODE GEN PURP 600V 30A TO247-3

WeEn Semiconductors

1,585
RFQ
BYC30WT-600PQ데이터시트 - TO-247-3 Tube Active Standard 600 V 30A 2.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 22 ns 10 µA @ 600 V - - - Through Hole TO-247-3 175°C (Max)
BYC30-600P,127

BYC30-600P,127

DIODE GEN PURP 600V 30A TO220AC

WeEn Semiconductors

7,896
RFQ
BYC30-600P,127데이터시트 - TO-220-2 Tube Active Standard 600 V 30A 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V - - - Through Hole TO-220AC 175°C (Max)
NXPSC046506Q

NXPSC046506Q

DIODE SIL CARB 650V 4A TO220AC

WeEn Semiconductors

20,200
RFQ
NXPSC046506Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 130pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC04650X6Q

NXPSC04650X6Q

DIODE SIL CARBIDE 650V 4A TO220F

WeEn Semiconductors

2,826
RFQ
NXPSC04650X6Q데이터시트 - TO-220-2 Full Pack, Isolated Tab Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 130pF @ 1V, 1MHz - - Through Hole TO-220F 175°C (Max)
NXPSC04650B6J

NXPSC04650B6J

DIODE SIL CARBIDE 650V 4A D2PAK

WeEn Semiconductors

3,090
RFQ
NXPSC04650B6J데이터시트 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 130pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
BYV60W-600PQ

BYV60W-600PQ

DIODE GEN PURP 600V 60A TO247-2

WeEn Semiconductors

4,084
RFQ
BYV60W-600PQ데이터시트 - TO-247-2 Tube Active Standard 600 V 60A 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C (Max)
WNSC2D08650DJ

WNSC2D08650DJ

DIODE SIL CARBIDE 650V 8A DPAK

WeEn Semiconductors

7,463
RFQ
WNSC2D08650DJ데이터시트 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 260pF @ 1V, 1MHz - - Surface Mount DPAK 175°C
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