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제조사 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합

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결과
사진 제조사 부품번호 재고 여부 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합
NXPSC06650D6J

NXPSC06650D6J

DIODE SIL CARBIDE 650V 6A DPAK

WeEn Semiconductors

5,450
RFQ
NXPSC06650D6J데이터시트 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 190pF @ 1V, 1MHz - - Surface Mount DPAK 175°C (Max)
WND60P16WQ

WND60P16WQ

DIODE GEN PURP 1.6KV 60A TO247-2

WeEn Semiconductors

463
RFQ
WND60P16WQ데이터시트 - TO-247-2 Tube Active Standard 1600 V 60A 1.12 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1600 V - - - Through Hole TO-247-2 -55°C ~ 150°C
BYC75W-600PQ

BYC75W-600PQ

DIODE GEN PURP 600V 75A TO247-2

WeEn Semiconductors

851
RFQ
BYC75W-600PQ데이터시트 - TO-247-2 Tube Active Standard 600 V 75A 2.75 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C (Max)
WNSC2D101200WQ

WNSC2D101200WQ

DIODE SIL CARB 1.2KV 10A TO247-2

WeEn Semiconductors

2,317
RFQ
WNSC2D101200WQ데이터시트 - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.65 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 490pF @ 1V, 1MHz - - Through Hole TO-247-2 175°C
NXPSC08650D6J

NXPSC08650D6J

DIODE SIL CARBIDE 650V 8A DPAK

WeEn Semiconductors

7,184
RFQ
NXPSC08650D6J데이터시트 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz - - Surface Mount DPAK 175°C (Max)
NXPSC086506Q

NXPSC086506Q

DIODE SIL CARB 650V 8A TO220AC

WeEn Semiconductors

3,000
RFQ
NXPSC086506Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC08650X6Q

NXPSC08650X6Q

DIODE SIL CARBIDE 650V 8A TO220F

WeEn Semiconductors

2,926
RFQ
NXPSC08650X6Q데이터시트 - TO-220-2 Full Pack, Isolated Tab Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz - - Through Hole TO-220F 175°C (Max)
NXPSC08650B6J

NXPSC08650B6J

DIODE SIL CARBIDE 650V 8A D2PAK

WeEn Semiconductors

3,160
RFQ
NXPSC08650B6J데이터시트 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
WNSC6D16650B6J

WNSC6D16650B6J

DIODE SIL CARBIDE 650V 16A D2PAK

WeEn Semiconductors

2,665
RFQ
WNSC6D16650B6J데이터시트 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 16A 1.45 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 780pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C
NXPSC106506Q

NXPSC106506Q

DIODE SIL CARB 650V 10A TO220AC

WeEn Semiconductors

3,000
RFQ
NXPSC106506Q데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
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