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제조사 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합

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결과
사진 제조사 부품번호 재고 여부 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합
NXPSC10650X6Q

NXPSC10650X6Q

DIODE SIL CARB 650V 10A TO220F

WeEn Semiconductors

2,995
RFQ
NXPSC10650X6Q데이터시트 - TO-220-2 Full Pack, Isolated Tab Bulk Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220F 175°C (Max)
NXPSC10650B6J

NXPSC10650B6J

DIODE SIL CARBIDE 650V 10A D2PAK

WeEn Semiconductors

2,290
RFQ
NXPSC10650B6J데이터시트 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 300pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
NXPSC126506Q

NXPSC126506Q

DIODE SIL CARB 650V 12A TO220AC

WeEn Semiconductors

990
RFQ
NXPSC126506Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 380pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
WNSC6D20650B6J

WNSC6D20650B6J

DIODE SIL CARBIDE 650V 20A D2PAK

WeEn Semiconductors

4,518
RFQ
WNSC6D20650B6J데이터시트 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 780pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C
NXPSC10650Q

NXPSC10650Q

DIODE SIL CARB 650V 10A TO220AC

WeEn Semiconductors

1,916
RFQ
NXPSC10650Q데이터시트 - TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
WNSC2D151200WQ

WNSC2D151200WQ

DIODE SIL CARB 1.2KV 15A TO247-2

WeEn Semiconductors

4,589
RFQ
WNSC2D151200WQ데이터시트 - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.7 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 1200 V 700pF @ 1V, 1MHz - - Through Hole TO-247-2 175°C
NXPSC166506Q

NXPSC166506Q

DIODE SIL CARB 650V 16A TO220AC

WeEn Semiconductors

3,003
RFQ
NXPSC166506Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 534pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC10650D6J

NXPSC10650D6J

DIODE SIL CARBIDE 650V 10A DPAK

WeEn Semiconductors

7,204
RFQ
NXPSC10650D6J데이터시트 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 300pF @ 1V, 1MHz - - Surface Mount DPAK 175°C (Max)
NXPSC206506Q

NXPSC206506Q

DIODE SIL CARB 650V 20A TO220AC

WeEn Semiconductors

3,041
RFQ
NXPSC206506Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 500 µA @ 650 V 600pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
WNSC2D30650WQ

WNSC2D30650WQ

SILICON CARBIDE SCHOTTKY DI

WeEn Semiconductors

275
RFQ
WNSC2D30650WQ데이터시트 - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 980pF @ 1V, 1MHz - - Through Hole TO-247-2 175°C
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