단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HER506T/RDIODE GEN PURP 600V 5A DO201AD EIC SEMICONDUCTOR INC. |
15,000 |
|
|
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 5A | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
FR207BULKDIODE GEN PURP 1KV 2A DO15 EIC SEMICONDUCTOR INC. |
3,000 |
|
|
- | DO-204AC, DO-15, Axial | Bag | Active | Standard | 1000 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 10 µA @ 1000 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-15 | -65°C ~ 150°C |
|
HER306BULKDIODE GEN PURP 600V 3A DO201AD EIC SEMICONDUCTOR INC. |
2,480 |
|
|
- | DO-201AD, Axial | Bag | Active | Standard | 600 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
AR2502DIODE GP 200V 25A MICRODE BUTTON EIC SEMICONDUCTOR INC. |
1,500 |
|
|
- | Microde Button | Bag | Active | Standard | 200 V | 25A | 1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | - | Automotive | - | Surface Mount | Microde Button | -65°C ~ 175°C |
|
HER503BULKDIODE GEN PURP 200V 5A DO201AD EIC SEMICONDUCTOR INC. |
3,000 |
|
|
- | DO-201AD, Axial | Bag | Active | Standard | 200 V | 5A | 1.1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
SB3B0-T/RDIODE SCHOTTKY 100V 3A DO201AD EIC SEMICONDUCTOR INC. |
3,750 |
|
|
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Schottky | 100 V | 3A | 790 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | - | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
SB390-BULKDIODE SCHOTTKY 90V 3A DO201AD EIC SEMICONDUCTOR INC. |
2,350 |
|
|
- | DO-201AD, Axial | Bag | Active | Schottky | 90 V | 3A | 790 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 500 µV | - | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
SS3D/BDIODE GEN PURP 200V 3A DO214AB EIC SEMICONDUCTOR INC. |
10,000 |
|
|
- | DO-214AB, SMC | Tape & Reel (TR) | Active | Standard | 200 V | 3A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 50pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AB (SMC) | -65°C ~ 150°C |
|
SF55-BULKDIODE GEN PURP 300V 5A DO201AD EIC SEMICONDUCTOR INC. |
3,000 |
|
|
- | DO-201AD, Axial | Bag | Active | Standard | 300 V | 5A | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 300 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
SF54-BULKDIODE GEN PURP 200V 5A DO201AD EIC SEMICONDUCTOR INC. |
3,000 |
|
|
- | DO-201AD, Axial | Bag | Active | Standard | 200 V | 5A | 950 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
