단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5400BULKDIODE GEN PURP 50V 3A DO201AD EIC SEMICONDUCTOR INC. |
4,000 |
|
|
- | DO-201AD, Axial | Bag | Active | Standard | 50 V | 3A | 950 mV @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 50 V | 28pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
|
1N5407BULKDIODE GEN PURP 800V 3A DO201AD EIC SEMICONDUCTOR INC. |
4,000 |
|
|
- | DO-201AD, Axial | Bag | Active | Standard | 800 V | 3A | 950 mV @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 28pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
|
RM11A-BULKDIODE GEN PURP 600V 1.2A D2 EIC SEMICONDUCTOR INC. |
5,000 |
|
|
- | D-2, Axial | Bag | Active | Standard | 600 V | 1.2A | 920 mV @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | 30pF @ 4V, 1MHz | - | - | Through Hole | D2 | -65°C ~ 175°C |
|
RM11B-BULKDIODE GEN PURP 800V 1.2A D2 EIC SEMICONDUCTOR INC. |
5,000 |
|
|
- | D-2, Axial | Bag | Active | Standard | 800 V | 1.2A | 920 mV @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 30pF @ 4V, 1MHz | - | - | Through Hole | D2 | -65°C ~ 175°C |
|
1N4005BULKDIODE GEN PURP 600V 1A DO41 EIC SEMICONDUCTOR INC. |
7,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 5 µA @ 600 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
HER306T/RDIODE GEN PURP 600V 3A DO201AD EIC SEMICONDUCTOR INC. |
5,000 |
|
|
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
HER305T/RDIODE GEN PURP 400V 3A DO201AD EIC SEMICONDUCTOR INC. |
5,000 |
|
|
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 3A | 1.1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
RM11C-BULKDIODE GEN PURP 1KV 1.2A D2 EIC SEMICONDUCTOR INC. |
5,000 |
|
|
- | D-2, Axial | Bag | Active | Standard | 1000 V | 1.2A | 920 mV @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | 30pF @ 4V, 1MHz | - | - | Through Hole | D2 | -65°C ~ 175°C |
|
FR101BULKDIODE GEN PURP 50V 1A DO41 EIC SEMICONDUCTOR INC. |
39,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 50 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
|
FR102BULKDIODE GEN PURP 100V 1A DO41 EIC SEMICONDUCTOR INC. |
38,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 100 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 100 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
