단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5396BULKDIODE GEN PURP 500V 1.5A DO41 EIC SEMICONDUCTOR INC. |
20,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 500 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 500 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
1N5394BULKDIODE GEN PURP 300V 1.5A DO41 EIC SEMICONDUCTOR INC. |
20,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 300 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 300 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
1N5397BULKDIODE GEN PURP 600V 1.5A DO41 EIC SEMICONDUCTOR INC. |
20,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 600 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 A @ 600 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
1N5392BULKDIODE GEN PURP 100V 1.5A DO41 EIC SEMICONDUCTOR INC. |
20,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 100 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
1N4007BULKDIODE GEN PURP 1KV 1A DO41 EIC SEMICONDUCTOR INC. |
17,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
1N5405BULKDIODE GEN PURP 500V 3A DO201AD EIC SEMICONDUCTOR INC. |
15,000 |
|
|
- | DO-201AD, Axial | Bag | Active | Standard | 500 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 500 V | 28pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
|
1N5401BULKDIODE GEN PURP 100V 3A DO201AD EIC SEMICONDUCTOR INC. |
14,647 |
|
|
- | DO-201AD, Axial | Bag | Active | Standard | 100 V | 3A | 950 mV @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 28pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
|
1N5403BULKDIODE GEN PURP 300V 3A DO201AD EIC SEMICONDUCTOR INC. |
13,500 |
|
|
- | DO-201AD, Axial | Bag | Active | Standard | 300 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 300 V | 28pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
|
1N5395BULKDIODE GEN PURP 400V 1.5A DO41 EIC SEMICONDUCTOR INC. |
10,000 |
|
|
- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 400 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 400 V | 15pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 175°C |
|
1N5402BULKDIODE GEN PURP 200V 3A DO201AD EIC SEMICONDUCTOR INC. |
6,750 |
|
|
- | DO-201AD, Axial | Bag | Active | Standard | 200 V | 3A | 950 mV @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 28pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
