단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCS105KGCDIODE SIL CARB 1.2KV 5A TO220AC Rohm Semiconductor |
2,216 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.75 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 325pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
SCS215KGHRCDIODE SIL CARB 1.2KV 15A TO220AC Rohm Semiconductor |
2,391 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.6 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 1200 V | 790pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
|
SCS320AMCDIODE SIL CARB 650V 20A TO220FM Rohm Semiconductor |
4,208 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 1000pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS220KGCDIODE SIL CARB 1.2KV 20A TO220AC Rohm Semiconductor |
4,297 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 1060pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
SCS220KGHRCDIODE SIL CARB 1.2KV 20A TO220AC Rohm Semiconductor |
4,869 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 1060pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
|
SCS120AGCDIODE SIL CARB 600V 20A TO220AC Rohm Semiconductor |
2,169 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 860pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
SCS110KGCDIODE SIL CARB 1.2KV 10A TO220AC Rohm Semiconductor |
2,692 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 650pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
SCS120KGCDIODE SIL CARB 1.2KV 20A TO220AC Rohm Semiconductor |
8,105 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 1300pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
1N4148T-73DIODE GEN PURP 75V 150MA GSD Rohm Semiconductor |
5,795 |
|
|
- | DO-204AH, DO-35, Axial | Cut Tape (CT) | Obsolete | Standard | 75 V | 150mA | 1 V @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 5 µA @ 75 V | 4pF @ 0V, 1MHz | - | - | Through Hole | GSD | -65°C ~ 200°C |
|
|
1SS133T-77DIODE GEN PURP 80V 130MA MSD Rohm Semiconductor |
8,710 |
|
|
- | DO-204AG, DO-34, Axial | Tape & Box (TB) | Obsolete | Standard | 80 V | 130mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 500 nA @ 80 V | 2pF @ 0.5V, 1MHz | - | - | Through Hole | MSD | 175°C (Max) |
