단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCS210KGHRCDIODE SIL CARB 1.2KV 10A TO220AC Rohm Semiconductor |
9,832 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 550pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
|
SCS308AMCDIODE SIL CARB 650V 8A TO220FM Rohm Semiconductor |
1 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS112AGCDIODE SIL CARB 600V 12A TO220AC Rohm Semiconductor |
3,335 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 516pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
SCS210KE2CDIODE SIL CARB 1.2KV 10A TO247 Rohm Semiconductor |
7,656 |
|
|
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247 | 175°C (Max) |
|
SCS210AMCDIODE SIL CARB 650V 10A TO220FM Rohm Semiconductor |
4 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 365pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS110AMCDIODE SIL CARB 600V 10A TO220FM Rohm Semiconductor |
4,548 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 430pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 150°C (Max) |
|
SCS215AMCDIODE SIL CARB 650V 12A TO220FM Rohm Semiconductor |
9,790 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 438pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS212AMCDIODE SIL CARB 650V 12A TO220FM Rohm Semiconductor |
5,745 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 438pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS312AMCDIODE SIL CARB 650V 12A TO220FM Rohm Semiconductor |
7,082 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS215KGCDIODE SIL CARB 1.2KV 15A TO220AC Rohm Semiconductor |
2,583 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.6 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 1200 V | 790pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
