단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCS206AMCDIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor |
9,883 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 600 V | 219pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS306APC9DIODE SILICON CARBIDE 650V 6A Rohm Semiconductor |
4,796 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | - | 175°C (Max) |
|
SCS304AMCDIODE SIL CARB 650V 4A TO220FM Rohm Semiconductor |
5,166 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS215AECDIODE SIL CARBIDE 650V 15A TO247 Rohm Semiconductor |
7,941 |
|
|
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | 175°C (Max) |
|
SCS215AGHRCDIODE SIL CARB 650V 15A TO220AC Rohm Semiconductor |
6,299 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
|
SCS220AGCDIODE SIL CARB 650V 20A TO220AC Rohm Semiconductor |
9,565 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
SCS208AMCDIODE SIL CARB 650V 8A TO220FM Rohm Semiconductor |
7,856 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.55 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 600 V | 291pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS306AMCDIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor |
6,403 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS220AECDIODE SIL CARBIDE 650V 20A TO247 Rohm Semiconductor |
2,874 |
|
|
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | 175°C (Max) |
|
SCS220AGHRCDIODE SIL CARB 650V 20A TO220AC Rohm Semiconductor |
5,973 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
