단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCS212AGCDIODE SIL CARB 650V 12A TO220AC Rohm Semiconductor |
8,837 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 438pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
SCS208AGHRCDIODE SIL CARB 650V 8A TO220AC Rohm Semiconductor |
5,407 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.55 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 600 V | 291pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
|
SCS108AGCDIODE SIL CARB 600V 8A TO220AC Rohm Semiconductor |
4,685 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 600 V | 345pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
RBLQ20NL10STLTRENCH MOS STRUCTURE, 100V, 20A, Rohm Semiconductor |
3,608 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 20A | 860 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 100 V | - | - | - | Surface Mount | TO-263L | 150°C |
|
SCS215AGCDIODE SIC 650V 15A TO220ACFP Rohm Semiconductor |
7,361 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C (Max) |
|
RBLQ30NL10STLTRENCH MOS STRUCTURE, 100V, 30A, Rohm Semiconductor |
4,194 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 30A | 860 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 100 V | - | - | - | Surface Mount | TO-263L | 150°C |
|
SCS205KGHRCDIODE SIL CARB 1.2KV 5A TO220AC Rohm Semiconductor |
2,123 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 270pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
|
SCS110AGCDIODE SIL CARB 600V 10A TO220AC Rohm Semiconductor |
2,240 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 430pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
SCS315AMCDIODE SIL CARB 650V 15A TO220FM Rohm Semiconductor |
9,396 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 750pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
RFUS20NS6STLDIODE GEN PURP 600V 20A LPDS Rohm Semiconductor |
6,489 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 20A | 2.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | - | - | Surface Mount | LPDS | 150°C (Max) |
