단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S25MRDIODE GEN PURP 1KV 25A DO220AA GeneSiC Semiconductor |
7,691 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 1000 V | 25A | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | - | -65°C ~ 175°C |
|
S25QDIODE GEN PURP 1.2KV 25A DO203AA GeneSiC Semiconductor |
8,868 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 1200 V | 25A | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | - | -65°C ~ 175°C |
|
S25QRDIODE GEN PURP 1.2KV 25A DO220AA GeneSiC Semiconductor |
3,266 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 1200 V | 25A | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | - | -65°C ~ 175°C |
|
FR6KR05DIODE GEN PURP REV 800V 6A DO4 GeneSiC Semiconductor |
4,582 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 800 V | 6A | 1.4 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 25 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
|
FR6MR05DIODE GEN PURP REV 1KV 6A DO4 GeneSiC Semiconductor |
8,656 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 1000 V | 6A | 1.4 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 25 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
|
GC15MPS12-220DIODE SIL CARB 1.2KV 82A TO220-2 GeneSiC Semiconductor |
9,148 |
|
|
SiC Schottky MPS™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 82A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 14 µA @ 1200 V | 1089pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GC10MPS12-252DIODE SIL CARB 1.2KV 50A TO252-2 GeneSiC Semiconductor |
5,200 |
|
|
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 50A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 660pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
GB10SLT12-252DIODE SIL CARB 1.2KV 10A TO252 GeneSiC Semiconductor |
6,387 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 2 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 520pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 | -55°C ~ 175°C |
|
|
GB05MPS17-247DIODE SIL CARB 1.7KV 25A TO247-2 GeneSiC Semiconductor |
5,897 |
|
|
SiC Schottky MPS™ | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1700 V | 25A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 6 µA @ 1700 V | 334pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GC15MPS12-247DIODE SIL CARB 1.2KV 75A TO247-2 GeneSiC Semiconductor |
2,366 |
|
|
SiC Schottky MPS™ | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 75A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 14 µA @ 1200 V | 1089pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
