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제조사 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합

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결과
사진 제조사 부품번호 재고 여부 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합
WNSC021200Q

WNSC021200Q

DIODE SIL CARB 1.2KV 2A TO220AC

WeEn Semiconductors

8,662
RFQ
WNSC021200Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 2A 1.6 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 109pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
WNSC201200WQ

WNSC201200WQ

DIODE SIL CARB 1.2KV 20A TO247-2

WeEn Semiconductors

3,478
RFQ
WNSC201200WQ데이터시트 - TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 20A 1.6 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 220 µA @ 1200 V 1020pF @ 1V, 1MHz - - Through Hole TO-247-2 175°C (Max)
WNSC051200Q

WNSC051200Q

DIODE SIL CARB 1.2KV 5A TO220AC

WeEn Semiconductors

5,407
RFQ
WNSC051200Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 5A 1.6 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 250pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC16650B6J

NXPSC16650B6J

DIODE SIL CARBIDE 650V 16A D2PAK

WeEn Semiconductors

3,106
RFQ
NXPSC16650B6J데이터시트 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 534pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
WNSC04650T6J

WNSC04650T6J

DIODE SIL CARBIDE 650V 4A 5DFN

WeEn Semiconductors

4,442
RFQ
WNSC04650T6J데이터시트 - 4-VSFN Exposed Pad Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V 141pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C (Max)
NXPSC12650B6J

NXPSC12650B6J

DIODE SIL CARBIDE 650V 12A D2PAK

WeEn Semiconductors

2,892
RFQ
NXPSC12650B6J데이터시트 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 380pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
WNSC10650T6J

WNSC10650T6J

DIODE SIL CARBIDE 650V 10A 5DFN

WeEn Semiconductors

7,135
RFQ
WNSC10650T6J데이터시트 - 4-VSFN Exposed Pad Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 328pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C (Max)
WNSC08650T6J

WNSC08650T6J

DIODE SIL CARBIDE 650V 8A 5DFN

WeEn Semiconductors

8,999
RFQ
WNSC08650T6J데이터시트 - 4-VSFN Exposed Pad Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 267pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C (Max)
WNSC12650WQ

WNSC12650WQ

DIODE SIL CARB 650V 12A TO247-2

WeEn Semiconductors

7,068
RFQ
WNSC12650WQ데이터시트 - TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 328pF @ 1V, 1MHz - - Through Hole TO-247-2 175°C
WNSC10650WQ

WNSC10650WQ

DIODE SIL CARB 650V 10A TO247-2

WeEn Semiconductors

3,149
RFQ
WNSC10650WQ데이터시트 - TO-247-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 328pF @ 1V, 1MHz - - Through Hole TO-247-2 175°C
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