단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WNSC021200QDIODE SIL CARB 1.2KV 2A TO220AC WeEn Semiconductors |
8,662 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 2A | 1.6 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 109pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
WNSC201200WQDIODE SIL CARB 1.2KV 20A TO247-2 WeEn Semiconductors |
3,478 |
|
|
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 1200 V | 1020pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
WNSC051200QDIODE SIL CARB 1.2KV 5A TO220AC WeEn Semiconductors |
5,407 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 250pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
NXPSC16650B6JDIODE SIL CARBIDE 650V 16A D2PAK WeEn Semiconductors |
3,106 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 534pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
WNSC04650T6JDIODE SIL CARBIDE 650V 4A 5DFN WeEn Semiconductors |
4,442 |
|
|
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 141pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
|
NXPSC12650B6JDIODE SIL CARBIDE 650V 12A D2PAK WeEn Semiconductors |
2,892 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
WNSC10650T6JDIODE SIL CARBIDE 650V 10A 5DFN WeEn Semiconductors |
7,135 |
|
|
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 328pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
|
WNSC08650T6JDIODE SIL CARBIDE 650V 8A 5DFN WeEn Semiconductors |
8,999 |
|
|
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 267pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
|
WNSC12650WQDIODE SIL CARB 650V 12A TO247-2 WeEn Semiconductors |
7,068 |
|
|
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 328pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
|
WNSC10650WQDIODE SIL CARB 650V 10A TO247-2 WeEn Semiconductors |
3,149 |
|
|
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 328pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
