단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NXPSC04650QDIODE SIL CARB 650V 4A TO220AC WeEn Semiconductors |
5,389 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
NXPSC06650QDIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors |
7,517 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
NXPSC08650QDIODE SIL CARB 650V 8A TO220AC WeEn Semiconductors |
3,421 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
NXPSC04650DJDIODE SIL CARBIDE 650V 4A DPAK WeEn Semiconductors |
4,190 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 170 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
|
NXPSC08650BJDIODE SIL CARBIDE 650V 8A D2PAK WeEn Semiconductors |
3,736 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
NXPSC08650DJDIODE SIL CARBIDE 650V 8A DPAK WeEn Semiconductors |
4,110 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
|
NXPLQSC106506QDIODE SCHOTTKY 650V 10A TO220AC WeEn Semiconductors |
4,503 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.85 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 250pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
WNSC201200CWQDIODE SIL CARB 1.2KV 20A TO247-3 WeEn Semiconductors |
4,087 |
|
|
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 510pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | 175°C (Max) |
|
WNSC401200CWQDIODE SIL CARB 1.2KV 40A TO247-3 WeEn Semiconductors |
5,908 |
|
|
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 40A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 810pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | 175°C (Max) |
|
WNSC101200QDIODE SIL CARB 1.2KV 10A TO220AC WeEn Semiconductors |
7,277 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 510pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
