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제조사 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합

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결과
사진 제조사 부품번호 재고 여부 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합
NXPSC04650Q

NXPSC04650Q

DIODE SIL CARB 650V 4A TO220AC

WeEn Semiconductors

5,389
RFQ
NXPSC04650Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 130pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC06650Q

NXPSC06650Q

DIODE SIL CARB 650V 6A TO220AC

WeEn Semiconductors

7,517
RFQ
NXPSC06650Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 190pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC08650Q

NXPSC08650Q

DIODE SIL CARB 650V 8A TO220AC

WeEn Semiconductors

3,421
RFQ
NXPSC08650Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
NXPSC04650DJ

NXPSC04650DJ

DIODE SIL CARBIDE 650V 4A DPAK

WeEn Semiconductors

4,190
RFQ
NXPSC04650DJ데이터시트 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 130pF @ 1V, 1MHz - - Surface Mount DPAK 175°C (Max)
NXPSC08650BJ

NXPSC08650BJ

DIODE SIL CARBIDE 650V 8A D2PAK

WeEn Semiconductors

3,736
RFQ
NXPSC08650BJ데이터시트 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C (Max)
NXPSC08650DJ

NXPSC08650DJ

DIODE SIL CARBIDE 650V 8A DPAK

WeEn Semiconductors

4,110
RFQ
NXPSC08650DJ데이터시트 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz - - Surface Mount DPAK 175°C (Max)
NXPLQSC106506Q

NXPLQSC106506Q

DIODE SCHOTTKY 650V 10A TO220AC

WeEn Semiconductors

4,503
RFQ
NXPLQSC106506Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.85 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 250pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
WNSC201200CWQ

WNSC201200CWQ

DIODE SIL CARB 1.2KV 20A TO247-3

WeEn Semiconductors

4,087
RFQ
WNSC201200CWQ데이터시트 - TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 20A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 510pF @ 1V, 1MHz - - Through Hole TO-247-3 175°C (Max)
WNSC401200CWQ

WNSC401200CWQ

DIODE SIL CARB 1.2KV 40A TO247-3

WeEn Semiconductors

5,908
RFQ
WNSC401200CWQ데이터시트 - TO-247-3 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 40A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 810pF @ 1V, 1MHz - - Through Hole TO-247-3 175°C (Max)
WNSC101200Q

WNSC101200Q

DIODE SIL CARB 1.2KV 10A TO220AC

WeEn Semiconductors

7,277
RFQ
WNSC101200Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 510pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
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