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제조사 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합

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결과
사진 제조사 부품번호 재고 여부 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합
WNSC2D2012006Q

WNSC2D2012006Q

WNSC2D201200/SOD59A/STANDARD MAR

WeEn Semiconductors

4,999
RFQ
WNSC2D2012006Q데이터시트 - TO-220-2 Bulk Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.65 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 950pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
WNSC2D08650TJ

WNSC2D08650TJ

DIODE SIL CARBIDE 650V 8A 5DFN

WeEn Semiconductors

8,039
RFQ
WNSC2D08650TJ데이터시트 - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 260pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C
BYC75W-1200PQ

BYC75W-1200PQ

DIODE GEN PURP 1.2KV 75A TO247-2

WeEn Semiconductors

9,568
RFQ
BYC75W-1200PQ데이터시트 - TO-247-2 Tube Active Standard 1200 V 75A - Fast Recovery =< 500ns, > 200mA (Io) 85 ns 250 µA @ 1200 V - - - Through Hole TO-247-2 175°C (Max)
WNSC2D201200W6Q

WNSC2D201200W6Q

DIODE SIL CARB 1.2KV 20A TO247-2

WeEn Semiconductors

2,379
RFQ
WNSC2D201200W6Q데이터시트 - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 845pF @ 1V, 1MHz - - Through Hole TO-247-2 175°C
WNSC06650T6J

WNSC06650T6J

DIODE SIL CARBIDE 650V 6A 5DFN

WeEn Semiconductors

2
RFQ
WNSC06650T6J데이터시트 - 4-VSFN Exposed Pad Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 190pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C (Max)
BYC100W-1200PQ

BYC100W-1200PQ

DIODE GP 1.2KV 100A TO247-2

WeEn Semiconductors

6,606
RFQ
BYC100W-1200PQ데이터시트 EEPP™ TO-247-2 Tube Active Standard 1200 V 100A 3.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 250 µA @ 1200 V - - - Through Hole TO-247-2 175°C (Max)
WNSC2D301200W6Q

WNSC2D301200W6Q

WNSC2D301200W/TO247-2L/STANDARD

WeEn Semiconductors

9,578
RFQ
WNSC2D301200W6Q데이터시트 - TO-247-2 Bulk Active SiC (Silicon Carbide) Schottky 1200 V 30A 1.6 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 1200 V 1407pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
WNSC2D401200W6Q

WNSC2D401200W6Q

WNSC2D401200W/TO247-2L/STANDARD

WeEn Semiconductors

9,449
RFQ
WNSC2D401200W6Q데이터시트 - TO-247-2 Bulk Active SiC (Silicon Carbide) Schottky 1200 V 40A 1.6 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 2068pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
WBST080SCM120CGALW

WBST080SCM120CGALW

WBST080SCM120CGAL/NAU000/NO MARK

WeEn Semiconductors

4,318
RFQ
WBST080SCM120CGALW데이터시트 - - Bulk Active - - - - - - - - - - - - -
NXPLQSC10650Q

NXPLQSC10650Q

DIODE SIL CARB 650V 10A TO220AC

WeEn Semiconductors

8,476
RFQ
NXPLQSC10650Q데이터시트 - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.85 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 250pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
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