단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WNSC2D2012006QWNSC2D201200/SOD59A/STANDARD MAR WeEn Semiconductors |
4,999 |
|
|
- | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 950pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
WNSC2D08650TJDIODE SIL CARBIDE 650V 8A 5DFN WeEn Semiconductors |
8,039 |
|
|
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
|
BYC75W-1200PQDIODE GEN PURP 1.2KV 75A TO247-2 WeEn Semiconductors |
9,568 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 75A | - | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
WNSC2D201200W6QDIODE SIL CARB 1.2KV 20A TO247-2 WeEn Semiconductors |
2,379 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 845pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
|
WNSC06650T6JDIODE SIL CARBIDE 650V 6A 5DFN WeEn Semiconductors |
2 |
|
|
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
|
BYC100W-1200PQDIODE GP 1.2KV 100A TO247-2 WeEn Semiconductors |
6,606 |
|
|
EEPP™ | TO-247-2 | Tube | Active | Standard | 1200 V | 100A | 3.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
|
WNSC2D301200W6QWNSC2D301200W/TO247-2L/STANDARD WeEn Semiconductors |
9,578 |
|
|
- | TO-247-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.6 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 1407pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
WNSC2D401200W6QWNSC2D401200W/TO247-2L/STANDARD WeEn Semiconductors |
9,449 |
|
|
- | TO-247-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 40A | 1.6 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 2068pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
WBST080SCM120CGALWWBST080SCM120CGAL/NAU000/NO MARK WeEn Semiconductors |
4,318 |
|
|
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NXPLQSC10650QDIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors |
8,476 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.85 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 250pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
