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제조사 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합

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결과
사진 제조사 부품번호 재고 여부 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합
GP3D015A120B

GP3D015A120B

DIODE SIL CARB 1.2KV 15A TO247-2

SemiQ

7,032
RFQ
GP3D015A120B데이터시트 Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.6 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 962pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP3D040A065U

GP3D040A065U

DIODE SIL CARB 650V 40A TO247-3

SemiQ

3,520
RFQ
GP3D040A065U데이터시트 Amp+™ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 40A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 835pF @ 1V, 1MHz - - Through Hole TO-247-3 -55°C ~ 175°C
GP3D020A120B

GP3D020A120B

DIODE SIL CARB 1.2KV 20A TO247-2

SemiQ

4,590
RFQ
GP3D020A120B데이터시트 Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.65 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 1179pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP3D050A065B

GP3D050A065B

DIODE SIL CARB 650V 135A TO247-2

SemiQ

6,200
RFQ
GP3D050A065B데이터시트 Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 135A 1.6 V @ 50 A No Recovery Time > 500mA (Io) - 125 µA @ 650 V 1946pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP3D030A120B

GP3D030A120B

DIODE SIL CARB 1.2KV 30A TO247-2

SemiQ

9,900
RFQ
GP3D030A120B데이터시트 Amp+™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 30A 1.7 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 1762pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D050A120B

GP2D050A120B

DIODE SIL CARB 1.2KV 50A TO247-2

SemiQ

8,045
RFQ
GP2D050A120B데이터시트 Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 50A 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 3174pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GP2D003A065A

GP2D003A065A

DIODE SIL CARB 650V 3A TO220-2

SemiQ

7,306
RFQ
GP2D003A065A데이터시트 Amp+™ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 3A 1.65 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 158pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D005A120A

GP2D005A120A

DIODE SIL CARB 1.2KV 5A TO220-2

SemiQ

9,665
RFQ
GP2D005A120A데이터시트 Amp+™ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 317pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GP2D005A120C

GP2D005A120C

DIODE SIL CARB 1.2KV 5A TO252-2L

SemiQ

8,410
RFQ
GP2D005A120C데이터시트 Amp+™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 317pF @ 1V, 1MHz - - Surface Mount TO-252-2L (DPAK) -55°C ~ 175°C
GP2D005A170B

GP2D005A170B

DIODE SIL CARB 1.7KV 5A TO247-2

SemiQ

3,053
RFQ
GP2D005A170B데이터시트 Amp+™ TO-247-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 1700 V 5A 1.75 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1700 V 406pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
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