단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP3D005A170BDIODE SIL CARB 1.7KV 21A TO247-2 SemiQ |
1,517 |
|
|
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 21A | 1.65 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 347pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D010A170BDIODE SIL CARB 1.7KV 39A TO247-2 SemiQ |
360 |
|
|
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 39A | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1700 V | 699pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D030A065BDIODE SIL CARB 650V 30A TO247-2 SemiQ |
142 |
|
|
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 1247pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D006A065ADIODE SIL CARB 650V 20A TO220-2L SemiQ |
50 |
|
|
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | - | 15 µA @ 650 V | 229pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
GP3D020A170BDIODE SIL CARB 1.7KV 67A TO247-2 SemiQ |
39 |
|
|
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 67A | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1700 V | 1403pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D050A120BDIODE SIL CARB 1.2KV 50A TO247-2 SemiQ |
44 |
|
|
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 3040pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D020A065BDIODE SIL CARB 650V 20A TO247-2 SemiQ |
99 |
|
|
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 835pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D010A120ADIODE SIL CARB 1.2KV 10A TO220-2 SemiQ |
6 |
|
|
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 608pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D015A120ADIODE SIL CARB 1.2KV 15A TO220-2 SemiQ |
10 |
|
|
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.6 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 962pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP2D003A060CDIODE SIL CARB 600V 3A TO252-2L SemiQ |
8,478 |
|
|
Amp+™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 3A | 1.65 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 600 V | 158pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2L (DPAK) | -55°C ~ 175°C |
