단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP3D008A065ADIODE SIL CARB 650V 8A TO220-2 SemiQ |
7,088 |
|
|
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 336pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D010A065ADIODE SIL CARB 650V 10A TO220-2 SemiQ |
8,334 |
|
|
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 419pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D010A065BDIODE SIL CARB 650V 10A TO247-2 SemiQ |
7,555 |
|
|
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 419pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D012A065ADIODE SIL CARB 650V 12A TO220-2 SemiQ |
6,993 |
|
|
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 572pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D008A065DDIODE SIC 650V 8A TO263-2L SemiQ |
3,278 |
|
|
- | - | Tape & Reel (TR) | Active | - | 650 V | 8A | - | - | - | - | - | - | - | - | - | - |
|
GP3D010A065CDIODE SILICON CARBIDE SemiQ |
8,544 |
|
|
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
GP3D010A065DDIODE SIC 650V 8A TO263-2L SemiQ |
5,502 |
|
|
- | - | Tape & Reel (TR) | Active | - | 650 V | 10A | - | - | - | - | - | - | - | - | - | - |
|
GP3D012A065BDIODE SIL CARB 650V 12A TO247-2 SemiQ |
2 |
|
|
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 572pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D020A065ADIODE SIL CARB 650V 20A TO220-2 SemiQ |
8,484 |
|
|
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 650 V | 1247pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D010A120BDIODE SIL CARB 1.2KV 10A TO247-2 SemiQ |
4,098 |
|
|
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 608pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
