단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FFSP2065BDN-F085DIODE SIL CARB 650V 10A TO220-3 onsemi |
180 |
|
|
- | TO-220-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 421pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-220-3 | -55°C ~ 175°C |
|
NDSH20120CDIODE SIL CARB 1.2KV 26A TO247-2 onsemi |
664 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 26A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1480pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FFSB2065B-F085DIODE SIL CARB 650V 20A D2PAK-3 onsemi |
678 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
FFSP3065ADIODE SIL CARB 650V 30A TO220-2L onsemi |
1,291 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 650 V | 1705pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
FFSP20120ADIODE SIL CARB 1.2KV 20A TO220L onsemi |
734 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1220pF @ 1V, 100KHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
FFSH2065B-F085DIODE SIL CARB 650V 20A TO247-2 onsemi |
157 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FFSH1065B-F085DIODE SIL CARB 650V 11.5A TO247 onsemi |
1,685 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.5A | - | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 421pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FFSP4065BDN-F085DIODE SIL CARB 650V 20A TO220-3 onsemi |
756 |
|
|
- | TO-220-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-220-3 | -55°C ~ 175°C |
|
FFSH20120A-F085DIODE SIL CARB 1.2KV 30A TO247-2 onsemi |
398 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1220pF @ 1V, 100KHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FFSH20120ADN-F085DIODE SIL CARB 1.2KV 15A TO247-3 onsemi |
304 |
|
|
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 612pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-247-3 | -55°C ~ 175°C |
