단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
1N4247DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
338 |
|
|
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
1N3595UR-1DIODE GP 125V 150MA DO213AA Microchip Technology |
624 |
|
|
- | DO-213AA | Bulk | Active | Standard | 125 V | 150mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | - | - | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
APT15DQ120BHBGDIODE GEN PURP 1.2KV 15A TO247-3 Microchip Technology |
101 |
|
|
- | TO-247-3 | Tube | Active | Standard | 1200 V | 15A | 3.5 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 240 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
MSC030SDA070KDIODE SIL CARB 700V 30A TO220-2 Microchip Technology |
119 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 30A | 1.5 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-220-2 | - |
|
MSC015SDA120BDIODE SCHOTTKY 1.2KV 15A TO247 Microchip Technology |
134 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247 | - |
|
JANTX1N3595UR-1DIODE GP 125V 150MA DO213AA Microchip Technology |
141 |
|
|
- | DO-213AA | Bulk | Active | Standard | 125 V | 150mA | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | Military | MIL-S-19500-241 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
MSC020SDA120KDIODE SIL CARB 1.2KV 49A TO220-2 Microchip Technology |
105 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 49A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1130pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
UES1104DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
105 |
|
|
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | - | - | - | Through Hole | A, Axial | -55°C ~ 150°C |
|
MNS1N6627US/TRDIODE GEN PURP 440V 1.75A E-MELF Microchip Technology |
483 |
|
|
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 440 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | - | - | - | Surface Mount | E-MELF | -65°C ~ 150°C |
|
1N4153UR/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
610 |
|
|
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
