단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT60DQ100BGDIODE GEN PURP 1KV 60A TO247 Microchip Technology |
244 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1000 V | 60A | 3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 255 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
|
APT40DQ100BGDIODE GEN PURP 1KV 40A TO247 Microchip Technology |
392 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1000 V | 40A | 3 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
|
1N649-1/TRDIODE GEN PURP 600V 400MA DO35 Microchip Technology |
206 |
|
|
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 400mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
APT15D100BGDIODE GEN PURP 1KV 15A TO247 Microchip Technology |
283 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1000 V | 15A | 2.3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 260 ns | 250 µA @ 1000 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
|
APT30D40BGDIODE GP 400V 30A TO247 Microchip Technology |
345 |
|
|
- | TO-247-2 | Tube | Active | Standard | 400 V | 30A | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 32 ns | 250 µA @ 400 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
|
UPS840/TR13DIODE SCHOTTKY 40V 8A POWERMITE3 Microchip Technology |
1,835 |
|
|
- | Powermite®3 | Tape & Reel (TR) | Active | Schottky | 40 V | 8A | 450 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 40 V | - | - | - | Surface Mount | Powermite 3 | -55°C ~ 125°C |
|
|
JANTX1N3595-1DIODE GEN PURP 125V 150MA DO35 Microchip Technology |
174 |
|
|
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 125 V | 150mA | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | Military | MIL-S-19500-241 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
1N4245DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
264 |
|
|
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 200 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
MSC010SDA070BDIODE SIL CARBIDE 700V 24A TO247 Microchip Technology |
122 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 24A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | 353pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
|
MSC010SDA120KDIODE SIL CARB 1.2KV 10A TO220 Microchip Technology |
178 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-220-2 | - |
