단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S400QDIODE GP 1.2KV 400A DO205AB DO9 GeneSiC Semiconductor |
3,416 |
|
|
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1200 V | 400A | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
S400QRDIODE GP REV 1.2KV 400A DO205AB GeneSiC Semiconductor |
4,366 |
|
|
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard, Reverse Polarity | 1200 V | 400A | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
S400YDIODE GP 1.6KV 400A DO205AB DO9 GeneSiC Semiconductor |
2,650 |
|
|
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1600 V | 400A | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
S400YRDIODE GP REV 1.6KV 400A DO205AB GeneSiC Semiconductor |
4,194 |
|
|
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard, Reverse Polarity | 1600 V | 400A | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
|
1N8030-GADIODE SIL CARB 650V 750MA TO257 GeneSiC Semiconductor |
8,359 |
|
|
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 750mA | 1.39 V @ 750 mA | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 76pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
|
1N8031-GADIODE SIL CARBIDE 650V 1A TO276 GeneSiC Semiconductor |
9,043 |
|
|
- | TO-276AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1A | 1.5 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 76pF @ 1V, 1MHz | - | - | Through Hole | TO-276 | -55°C ~ 250°C |
|
|
1N8032-GADIODE SIL CARB 650V 2.5A TO257 GeneSiC Semiconductor |
9,538 |
|
|
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 2.5A | 1.3 V @ 2.5 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 274pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
|
1N8024-GADIODE SIL CARB 1.2KV 750MA TO257 GeneSiC Semiconductor |
6,134 |
|
|
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 750mA | 1.74 V @ 750 mA | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 66pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
|
1N8033-GADIODE SIL CARB 650V 4.3A TO276 GeneSiC Semiconductor |
2,273 |
|
|
- | TO-276AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4.3A | 1.65 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 274pF @ 1V, 1MHz | - | - | Surface Mount | TO-276 | -55°C ~ 250°C |
|
|
1N8026-GADIODE SIL CARBIDE 1.2KV 8A TO257 GeneSiC Semiconductor |
6,833 |
|
|
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 8A | 1.6 V @ 2.5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 237pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
