단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FR20G02DIODE GEN PURP 400V 20A DO5 GeneSiC Semiconductor |
2,977 |
|
|
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 400 V | 20A | 1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -40°C ~ 125°C |
|
FR20J02DIODE GEN PURP 600V 20A DO5 GeneSiC Semiconductor |
5,574 |
|
|
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 600 V | 20A | 1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 25 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -40°C ~ 125°C |
|
GD30MPS12JDIODE SIL CARB 1.2KV 59A TO263-7 GeneSiC Semiconductor |
5,115 |
|
|
SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 59A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 1101pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
|
GAP3SLT33-220FPDIODE SIC 3.3KV 300MA TO220FP GeneSiC Semiconductor |
2,729 |
|
|
SiC Schottky MPS™ | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 3300 V | 300mA | 1.7 V @ 300 mA | - | 0 ns | 5 µA @ 3300 V | 42pF @ 1V, 1MHz | - | - | Through Hole | TO-220FP | -55°C ~ 175°C |
|
FR12BR02DIODE GEN PURP REV 100V 12A DO4 GeneSiC Semiconductor |
7,472 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 100 V | 12A | 800 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
|
FR12DR02DIODE GEN PURP REV 200V 12A DO4 GeneSiC Semiconductor |
6,320 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 200 V | 12A | 800 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
|
FR12GR02DIODE GEN PURP REV 400V 12A DO4 GeneSiC Semiconductor |
7,185 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 400 V | 12A | 800 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
|
FR12JR02DIODE GEN PURP REV 600V 12A DO4 GeneSiC Semiconductor |
6,966 |
|
|
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 12A | 800 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 25 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
|
|
GC20MPS12-247DIODE SIL CARB 1.2KV 90A TO247-2 GeneSiC Semiconductor |
6,667 |
|
|
SiC Schottky MPS™ | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 90A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | 1298pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FR20K05DIODE GEN PURP 800V 20A DO5 GeneSiC Semiconductor |
6,327 |
|
|
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 800 V | 20A | 1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 25 µA @ 800 V | - | - | - | Chassis, Stud Mount | DO-5 | -40°C ~ 125°C |
