단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WB30FV60ALZWB30FV60AL/NAU000/NO MARK*CHIPS WeEn Semiconductors |
8,081 |
|
|
- | Die | Bulk | Active | Standard | 600 V | 30A | 1.55 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 10 µA @ 600 V | - | - | - | Surface Mount | Wafer | -40°C ~ 175°C |
|
BYC58X-600,127DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors |
2,526 |
|
|
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 8A | 3.2 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 12.5 ns | 150 µA @ 600 V | - | - | - | Through Hole | TO-220FP | 150°C (Max) |
|
WNSC2D051200D6JWNSC2D051200D/TO252/REEL 13" Q1 WeEn Semiconductors |
4,281 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
BYC20-600,127DIODE GEN PURP 500V 20A TO220AC WeEn Semiconductors |
5,624 |
|
|
- | TO-220-2 | Tube | Active | Standard | 500 V | 20A | 2.9 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 200 µA @ 600 V | - | - | - | Through Hole | TO-220AC | 150°C (Max) |
|
BYC20D-600PQDIODE GEN PURP 600V 20A TO220AC WeEn Semiconductors |
5,761 |
|
|
- | TO-220-2 | Tube | Active | Standard | 600 V | 20A | 2.9 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
WNB199V5APTSVWNB199V5APTS/NAU000/NO MARK*CHIP WeEn Semiconductors |
2,990 |
|
|
- | Die | Bulk | Active | Standard | 600 V | 60A | 2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 600 V | - | - | - | Surface Mount | Wafer | 175°C |
|
WNSC6D04650QDIODE SIL CARB 650V 4A TO220AC WeEn Semiconductors |
9,581 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.4 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 233pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
|
WNSC2D0512006QDIODE SIL CARB 1.2KV 5A TO220AC WeEn Semiconductors |
5,992 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
WNSC2D06650XQDIODE SIL CARBIDE 650V 6A TO220F WeEn Semiconductors |
7,880 |
|
|
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 198pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C |
|
WNSC2D06650QDIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors |
7,376 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 198pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
