단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCS220AGC17DIODE SIC 650V 20A TO220ACFP Rohm Semiconductor |
706 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
SCS206AJHRTLLDIODE SIL CARB 650V 6A TO263AB Rohm Semiconductor |
2,756 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 600 V | 219pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB | 175°C (Max) |
|
SCS310AJTLLDIODE SIL CARBIDE 650V 10A LPTL Rohm Semiconductor |
518 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | LPTL | 175°C (Max) |
|
SCS312AJTLLDIODE SIL CARBIDE 650V 12A LPTL Rohm Semiconductor |
849 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Surface Mount | LPTL | 175°C (Max) |
|
RFL30TZ6SGC13DIODE GEN PURP 650V 30A TO247GE Rohm Semiconductor |
624 |
|
|
- | TO-247-2 | Tube | Not For New Designs | Standard | 650 V | 30A | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 5 µA @ 650 V | - | - | - | Through Hole | TO-247GE | 175°C |
|
SCS208AJHRTLLDIODE SIL CARB 650V 8A TO263AB Rohm Semiconductor |
932 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.55 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 600 V | 291pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB | 175°C (Max) |
|
SCS315AJTLLDIODE SIL CARBIDE 650V 15A LPTL Rohm Semiconductor |
400 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 750pF @ 1V, 1MHz | - | - | Surface Mount | LPTL | 175°C (Max) |
|
SCS210AJHRTLLDIODE SIL CARB 650V 10A TO263AB Rohm Semiconductor |
894 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 365pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263AB | 175°C (Max) |
|
RFL60TZ6SGC13DIODE GEN PURP 650V 60A TO247GE Rohm Semiconductor |
601 |
|
|
- | TO-247-2 | Tube | Not For New Designs | Standard | 650 V | 60A | 1.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 650 V | - | - | - | Through Hole | TO-247GE | 175°C |
|
SCS215KGC17DIODE SIC 1.2KV 15A TO220ACFP Rohm Semiconductor |
1,996 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.6 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 1200 V | 790pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
