단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UJ3D1725K2DIODE SIL CARB 1.7KV 25A TO247-2 Qorvo |
4,349 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 25A | 1.7 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 360 µA @ 1700 V | 1500pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
UJ3D1250K2DIODE SIL CARB 1.2KV 50A TO247-2 Qorvo |
14,813 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 2340pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
UJ3D1210TSDIODE SIL CARB 1.2KV 10A TO220-2 Qorvo |
8,990 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 510pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UJ3D06560KSDDIODE SIL CARB 650V 30A TO247-3 Qorvo |
6,369 |
|
|
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 740 µA @ 650 V | 1980pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
UJ3D1250KDIODE SIL CARB 1.2KV 50A TO247-3 Qorvo |
6,427 |
|
|
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 2340pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
UJ3D1202TSDIODE SIL CARB 1.2KV 2A TO220-2 Qorvo |
16,006 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 2A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 22 µA @ 1200 V | 109pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UJ3D06506TSDIODE SIL CARB 650V 6A TO220-2 Qorvo |
57,316 |
|
|
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 196pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UJ3D06510TSDIODE SIL CARB 650V 10A TO220-2 Qorvo |
11,657 |
|
|
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 327pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UJ3D1205TSDIODE SIL CARB 1.2KV 5A TO220-2 Qorvo |
27,393 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 1200 V | 250pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UJ3D06520TSDIODE SIL CARB 650V 20A TO220-2 Qorvo |
6,004 |
|
|
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 654pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
