단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CD4148DIODE GEN PURP 75V 200MA DIE Microchip Technology |
868 |
|
|
- | Die | Tray | Active | Standard | 75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 75 V | - | - | - | Surface Mount | Die | -55°C ~ 175°C |
|
|
APT30DQ100KGDIODE GEN PURP 1KV 30A TO220 Microchip Technology |
58 |
|
|
- | TO-220-2 | Tube | Active | Standard | 1000 V | 30A | 3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 295 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
1N5616DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
91 |
|
|
- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
|
JANTX1N5620DIODE GEN PURP 800V 1A AXIAL Microchip Technology |
47 |
|
|
- | A, Axial | Bulk | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
JANTX1N5551DIODE GEN PURP 400V 5A AXIAL Microchip Technology |
83 |
|
|
- | B, Axial | Bulk | Active | Standard | 400 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5711DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology |
87 |
|
|
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 70 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
JANTX1N5809DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
68 |
|
|
- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5618USDIODE GEN PURP 600V 1A D-5A Microchip Technology |
35 |
|
|
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | - | - | Surface Mount | D-5A | -65°C ~ 200°C |
|
1N5420DIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
70 |
|
|
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N6640USDIODE GEN PURP 50V 300MA D-5D Microchip Technology |
49 |
|
|
- | SQ-MELF, D | Bulk | Active | Standard | 50 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | Military | MIL-PRF-19500/609 | Surface Mount | D-5D | -65°C ~ 175°C |
