단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CDBZ5T1045-HFDIODE SCHOTTKY 45V 10A SMC Comchip Technology |
263 |
|
|
- | Z5-T | Tape & Reel (TR) | Obsolete | Schottky | 45 V | 10A | 550 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | - | - | - | Surface Mount | SMC (Z5-T) | -55°C ~ 150°C |
|
CDBJFSC5650-GDIODE SIL CARBIDE 650V 5A TO220F Comchip Technology |
346 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 430pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
CDBD2SC21200-GDIODE SIL CARB 1.2KV 6.2A TO263 Comchip Technology |
381 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 6.2A | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 136pF @ 0V, 1MHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
CDBDSC8650-GDIODE SIL CARB 650V 25.5A DPAK Comchip Technology |
342 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 25.5A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 550pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
CDBJFSC8650-GDIODE SIL CARBIDE 650V 8A TO220F Comchip Technology |
479 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 560pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
CDBJSC10650-GDIODE SIL CARB 650V 10A TO220F Comchip Technology |
472 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 710pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
CDBDSC10650-GDIODE SIL CARBIDE 650V 10A DPAK Comchip Technology |
355 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 690pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
CDBJFSC101200-GDIODE SIL CARB 1.2KV 10A TO220F Comchip Technology |
553 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
CDBDSC51200-GDIODE SIL CARBIDE 1.2KV 18A DPAK Comchip Technology |
411 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 18A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 475pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
CDBFR03100-HFDIODE SCHOTTKY 100V 300MA 1005 Comchip Technology |
1,424 |
|
|
- | 1005 (2512 Metric) | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 300mA | 820 mV @ 300 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | 25pF @ 1V, 1MHz | - | - | Surface Mount | 1005/SOD-323F | -40°C ~ 150°C |
