단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBRB1045HM3/IDIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
5,070 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 45 V | 10A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 150°C |
|
FESB16DT-M3/IDIODE GEN PURP 200V 16A TO263AB Vishay General Semiconductor - Diodes Division |
8,415 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 200 V | 16A | 975 mV @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 175pF @ 4V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 150°C |
|
MBRB1045-M3/IDIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
8,868 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 45 V | 10A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | - | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 150°C |
|
VS-100BGQ030-N4DIODE SCHOTTKY 30V 100A POWIRTAB Vishay General Semiconductor - Diodes Division |
6,380 |
|
|
- | PowerTab® | Bulk | Active | Schottky | 30 V | 100A | 630 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.4 mA @ 30 V | 3800pF @ 5V, 1MHz | - | - | Through Hole | PowerTab® | -55°C ~ 150°C |
|
VS-150EBU04HN4DIODE GP 400V 150A POWERTAB Vishay General Semiconductor - Diodes Division |
5,145 |
|
|
- | PowerTab® | Tube | Active | Standard | 400 V | 150A | 1.3 V @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | 93 ns | 50 µA @ 400 V | - | - | - | Through Hole | PowerTab® | -55°C ~ 175°C |
|
VS-175BGQ030-N4DIODE SCHOTTKY 30V 175A POWIRTAB Vishay General Semiconductor - Diodes Division |
4,584 |
|
|
- | PowerTab® | Bulk | Active | Schottky | 30 V | 175A | 590 mV @ 175 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.8 mA @ 30 V | 8500pF @ 5V, 1MHz | - | - | Through Hole | PowerTab® | -55°C ~ 150°C |
|
VS-150EBU04-N4DIODE GP 400V 150A POWIRTAB Vishay General Semiconductor - Diodes Division |
5,486 |
|
|
- | PowerTab® | Bulk | Active | Standard | 400 V | 150A | 1.3 V @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 50 µA @ 400 V | - | - | - | Through Hole | PowerTab® | -55°C ~ 175°C |
|
VS-175BGQ045-N4DIODE SCHOTTKY 45V 175A POWIRTAB Vishay General Semiconductor - Diodes Division |
3,681 |
|
|
- | PowerTab® | Bulk | Active | Schottky | 45 V | 175A | 750 mV @ 175 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 mA @ 45 V | 5600pF @ 5V, 1MHz | - | - | Through Hole | PowerTab® | -55°C ~ 150°C |
|
VS-80EBU02HN4DIODE GEN PURP 200V 80A POWERTAB Vishay General Semiconductor - Diodes Division |
7,946 |
|
|
- | PowerTab® | Tube | Active | Standard | 200 V | 80A | 1.1 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 50 µA @ 200 V | - | - | - | Through Hole | PowerTab® | -55°C ~ 175°C |
|
VS-80EBU04-N4DIODE GEN PURP 400V 80A POWIRTAB Vishay General Semiconductor - Diodes Division |
2,687 |
|
|
- | PowerTab® | Bulk | Active | Standard | 400 V | 80A | 1.3 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 87 ns | 50 µA @ 400 V | - | - | - | Through Hole | PowerTab® | -55°C ~ 175°C |
