단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-8EWF10SPBFDIODE GEN PURP 1KV 8A TO252 Vishay General Semiconductor - Diodes Division |
2,448 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | Standard | 1000 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 270 ns | 100 µA @ 1000 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
|
VS-8EWF12SPBFDIODE GEN PURP 1.2KV 8A TO252 Vishay General Semiconductor - Diodes Division |
5,316 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | Standard | 1200 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
|
VS-8EWS08SPBFDIODE GEN PURP 800V 8A TO252 Vishay General Semiconductor - Diodes Division |
9,236 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | Standard | 800 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 800 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -55°C ~ 150°C |
|
VS-8EWS12SPBFDIODE GEN PURP 1.2KV 8A TO252 Vishay General Semiconductor - Diodes Division |
4,233 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | Standard | 1200 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1200 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -55°C ~ 150°C |
|
VS-8EWS16SPBFDIODE GEN PURP 1.6KV 8A TO252 Vishay General Semiconductor - Diodes Division |
7,457 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | Standard | 1600 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1600 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -40°C ~ 150°C |
|
|
VS-8TQ080-N3DIODE SCHOTTKY 80V 8A TO220AC Vishay General Semiconductor - Diodes Division |
6,589 |
|
|
- | TO-220-2 | Tube | Obsolete | Schottky | 80 V | 8A | 720 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | - | - | Through Hole | TO-220AC | -65°C ~ 180°C |
|
VS-APH3006-F3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
8,573 |
|
|
FRED Pt® | TO-247-3 | Tube | Obsolete | Standard | 600 V | 30A | 2.65 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 30 µA @ 600 V | - | - | - | Through Hole | TO-247AC | -65°C ~ 175°C |
|
VS-APU3006-F3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
5,099 |
|
|
FRED Pt® | TO-247-3 | Tube | Obsolete | Standard | 600 V | 30A | 2.65 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 30 µA @ 600 V | - | - | - | Through Hole | TO-247AC | -65°C ~ 175°C |
|
VS-EPH3006-F3DIODE GP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
5,776 |
|
|
FRED Pt® | TO-247-2 | Tube | Obsolete | Standard | 600 V | 30A | 2.65 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 26 ns | 30 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -65°C ~ 175°C |
|
VS-EPU3006-F3DIODE GP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,584 |
|
|
FRED Pt® | TO-247-2 | Tube | Obsolete | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -65°C ~ 175°C |
