단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RB208RSM10STFTL1100V 15A, TO-277A, ULTRA LOW SBD Rohm Semiconductor |
5,064 |
|
|
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 100 V | 15A | 850 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5.2 µA @ 100 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
|
RB218RSM15STFTL1150V 20A, TO-277A, ULTRA LOW SBD Rohm Semiconductor |
3,776 |
|
|
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 150 V | 20A | 900 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8.3 µA @ 150 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
|
RB208RSM15STFTL1150V 15A, TO-277A, ULTRA LOW SBD Rohm Semiconductor |
4,298 |
|
|
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Schottky | 150 V | 15A | 880 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8.3 µA @ 150 V | - | Automotive | AEC-Q101 | Surface Mount | TO-277A | 175°C |
|
SCS304AMC7GDIODE SIL CARB 650V 4A TO220FM Rohm Semiconductor |
8,300 |
|
|
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
SCS304AGC16DIODE SIL CARB 650V 4A TO220ACP Rohm Semiconductor |
2,519 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
SCS306AMC7GDIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor |
5,601 |
|
|
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
SCS306AGC16DIODE SIL CARB 650V 6A TO220ACP Rohm Semiconductor |
6,950 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
SCS308AMC7GDIODE SIL CARB 650V 8A TO220FM Rohm Semiconductor |
5,102 |
|
|
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
SCS308AGC16DIODE SIL CARB 650V 8A TO220ACP Rohm Semiconductor |
9,940 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
SCS312AMC7GDIODE SIL CARB 650V 12A TO220FM Rohm Semiconductor |
8,395 |
|
|
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
