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제조사 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합

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결과
사진 제조사 부품번호 재고 여부 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합
PCDB0865G1_R2_00001

PCDB0865G1_R2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,390
RFQ
PCDB0865G1_R2_00001데이터시트 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 296pF @ 1V, 1MHz - - Surface Mount TO-263 -55°C ~ 175°C
PCDD0865G1_L2_00001

PCDD0865G1_L2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,977
RFQ
PCDD0865G1_L2_00001데이터시트 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 296pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
PCDP0865G1_T0_00001

PCDP0865G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

1,995
RFQ
PCDP0865G1_T0_00001데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 296pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP1665G1_T0_00001

PCDP1665G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

2,000
RFQ
PCDP1665G1_T0_00001데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 618pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP1065G1_T0_00001

PCDP1065G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

1,478
RFQ
PCDP1065G1_T0_00001데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 364pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDB1065G1_R2_00001

PCDB1065G1_R2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

4,000
RFQ
PCDB1065G1_R2_00001데이터시트 - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 364pF @ 1V, 1MHz - - Surface Mount TO-263 -55°C ~ 175°C
PCDD1065G1_L2_00001

PCDD1065G1_L2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,797
RFQ
PCDD1065G1_L2_00001데이터시트 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 364pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
PCDP08120G1_T0_00001

PCDP08120G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

2,000
RFQ
PCDP08120G1_T0_00001데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 418pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP2065G1_T0_00001

PCDP2065G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

2,000
RFQ
PCDP2065G1_T0_00001데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 650 V 747pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP10120G1_T0_00001

PCDP10120G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

1,984
RFQ
PCDP10120G1_T0_00001데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 529pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
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