단일 다이오드
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 기술 | 전압 - DC 역방향(Vr)(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 속도 | 역방향 복구 시간(trr) | 전류 - 역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 | 작동 온도 - 접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PCDB0865G1_R2_00001650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,390 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 296pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
PCDD0865G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,977 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 296pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
PCDP0865G1_T0_00001TO-220AC, SIC Panjit International Inc. |
1,995 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 296pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDP1665G1_T0_00001TO-220AC, SIC Panjit International Inc. |
2,000 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 618pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDP1065G1_T0_00001TO-220AC, SIC Panjit International Inc. |
1,478 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDB1065G1_R2_00001650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
4,000 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
PCDD1065G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,797 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
PCDP08120G1_T0_00001TO-220AC, SIC Panjit International Inc. |
2,000 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 418pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDP2065G1_T0_00001TO-220AC, SIC Panjit International Inc. |
2,000 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 747pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDP10120G1_T0_00001TO-220AC, SIC Panjit International Inc. |
1,984 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 529pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
