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제조사 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합

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결과
사진 제조사 부품번호 재고 여부 가격 수량 데이터시트 시리즈 패키지/케이스 패키징 제품 상태 기술 전압 - DC 역방향(Vr)(최대) 전류 - 평균 정류(Io) 전압 - 순방향(Vf)(최대) @ If 속도 역방향 복구 시간(trr) 전류 - 역방향 누설 @ Vr 커패시턴스 @ Vr, F 등급 자격 장착 유형 공급자 장치 패키지 작동 온도 - 접합
PCDF0865G1_T0_00601

PCDF0865G1_T0_00601

650V/8A THROUGH HOLE SILICON CAR

Panjit International Inc.

2,000
RFQ
PCDF0865G1_T0_00601데이터시트 - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole ITO-220AC -55°C ~ 175°C
PCDP0865GB_T0_00601

PCDP0865GB_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000
RFQ
PCDP0865GB_T0_00601데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.6 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 372pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP1065GC_T0_00601

PCDP1065GC_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

1,961
RFQ
PCDP1065GC_T0_00601데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 271pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDD1065GB_L2_00601

PCDD1065GB_L2_00601

650V/10A IN TO-252AA PACKAGE SIL

Panjit International Inc.

3,000
RFQ
PCDD1065GB_L2_00601데이터시트 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 610pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
PCDF1065G1_T0_00601

PCDF1065G1_T0_00601

650V/10A THROUGH HOLE SILICON CA

Panjit International Inc.

2,000
RFQ
PCDF1065G1_T0_00601데이터시트 - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 380pF @ 1V, 1MHz - - Through Hole ITO-220AC -55°C ~ 175°C
PCDP1065GB_T0_00601

PCDP1065GB_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

1,975
RFQ
PCDP1065GB_T0_00601데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 446pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP1265GC_T0_00601

PCDP1265GC_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000
RFQ
PCDP1265GC_T0_00601데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.8 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 372pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP15120GB_T0_00601

PCDP15120GB_T0_00601

SIC DIODE 1200V/15A IN TO-220AC

Panjit International Inc.

2,000
RFQ
PCDP15120GB_T0_00601데이터시트 - - Tube Active - - - - - - - - - - - - -
PCDP1265GB_T0_00601

PCDP1265GB_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000
RFQ
PCDP1265GB_T0_00601데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.6 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 529pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP1665GC_T0_00601

PCDP1665GC_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000
RFQ
PCDP1665GC_T0_00601데이터시트 - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.8 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 446pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
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