브리지 정류기
| 사진 | 제조사 부품번호 | 재고 여부 | 수량 | 데이터시트 | 시리즈 | 패키지/케이스 | 패키징 | 제품 상태 | 다이오드 유형 | 기술 | 전압 - 피크 역방향(최대) | 전류 - 평균 정류(Io) | 전압 - 순방향(Vf)(최대) @ If | 전류 - 역방향 누설 @ Vr | 작동 온도 | 등급 | 자격 | 장착 유형 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GSIB2520N-M3/45BRIDGE RECT 1P 200V 25A GSIB-5S Vishay General Semiconductor - Diodes Division |
5,587 |
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- | 4-SIP, GSIB-5S | Tube | Active | Single Phase | Standard | 200 V | 25 A | 1 V @ 12.5 A | 10 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GSIB-5S |
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GSIB2540N-M3/45BRIDGE RECT 1P 400V 25A GSIB-5S Vishay General Semiconductor - Diodes Division |
3,841 |
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- | 4-SIP, GSIB-5S | Tube | Active | Single Phase | Standard | 400 V | 25 A | - | 10 µA @ 400 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GSIB-5S |
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GSIB2560N-M3/45BRIDGE RECT 1P 600V 25A GSIB-5S Vishay General Semiconductor - Diodes Division |
8,445 |
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- | 4-SIP, GSIB-5S | Tube | Active | Single Phase | Standard | 600 V | 25 A | 1 V @ 12.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GSIB-5S |
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GBL01-E3/51BRIDGE RECT 1PHASE 100V 3A GBL Vishay General Semiconductor - Diodes Division |
6,062 |
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- | 4-SIP, GBL | Bulk | Discontinued at Digi-Key | Single Phase | Standard | 100 V | 3 A | 1.1 V @ 4 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBL |
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GBL04-E3/51BRIDGE RECT 1PHASE 400V 3A GBL Vishay General Semiconductor - Diodes Division |
8,511 |
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- | 4-SIP, GBL | Bulk | Discontinued at Digi-Key | Single Phase | Standard | 400 V | 3 A | 1.1 V @ 4 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBL |
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BU25H06-M3/PBRIDGE RECT 1PHASE 600V 3.5A BU Vishay General Semiconductor - Diodes Division |
8,907 |
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isoCink+™ | 4-SIP, BU | Tube | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 175°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
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BU25H08-M3/PBRIDGE RECT 1PHASE 600V 3.5A BU Vishay General Semiconductor - Diodes Division |
6,208 |
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isoCink+™ | 4-SIP, BU | Tube | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 175°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
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BU25H06-E3/ABRIDGE RECT 1PHASE 600V 3.5A BU Vishay General Semiconductor - Diodes Division |
2,320 |
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isoCink+™ | 4-SIP, BU | Tray | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 175°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
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BU25H06-E3/PBRIDGE RECT 1PHASE 600V 3.5A BU Vishay General Semiconductor - Diodes Division |
6,978 |
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isoCink+™ | 4-SIP, BU | Tube | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 175°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
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BU25H08-E3/PBRIDGE RECT 1PHASE 600V 3.5A BU Vishay General Semiconductor - Diodes Division |
9,930 |
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isoCink+™ | 4-SIP, BU | Tube | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 175°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
